MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications

dc.contributor.authorYahyaoui, Makrem
dc.contributor.authorAouassa, Mansour
dc.contributor.authorBouabdellaoui, Mohammed
dc.contributor.authorAmdouni, Sonia
dc.contributor.authorAladim, A.K.
dc.contributor.authorAli, Abdulraoof I.
dc.contributor.authorBoujdaria, Kais
dc.date.accessioned2025-02-13T09:30:34Z
dc.date.issued2024-10
dc.descriptionDATA AVAILABILITY : Data will be made available on reasonable request.en_US
dc.description.abstractPlease read abstract in the article.en_US
dc.description.departmentPhysicsen_US
dc.description.embargo2025-09-30
dc.description.librarianhj2024en_US
dc.description.sdgSDG-09: Industry, innovation and infrastructureen_US
dc.description.sponsorshipThe Deanship of Scientific Research at Jouf University.en_US
dc.description.urihttps://link.springer.com/journal/339en_US
dc.identifier.citationYahyaoui, M., Aouassa, M., Bouabdellaoui, M. et al. MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications. Applied Physics A 130, 762 (2024). https://doi.org/10.1007/s00339-024-07926-5.en_US
dc.identifier.issn0947-8396 (print)
dc.identifier.issn1432-0630 (online)
dc.identifier.other10.1007/s00339-024-07926-5
dc.identifier.urihttp://hdl.handle.net/2263/100821
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.rights© The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2024. The original publication is available at : https://link.springer.com/journal/339.en_US
dc.subjectPIN diodesen_US
dc.subjectMn-doped-Ge quantum dotsen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectStranski-Krastanoven_US
dc.subjectPhotodetectoren_US
dc.subjectSolar cell applicationsen_US
dc.subjectUltra-high vacuum molecular beam epitaxy (UHV-MBE)en_US
dc.subjectSDG-09: Industry, innovation and infrastructureen_US
dc.titleMBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applicationsen_US
dc.typePostprint Articleen_US

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