MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications
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Date
Authors
Yahyaoui, Makrem
Aouassa, Mansour
Bouabdellaoui, Mohammed
Amdouni, Sonia
Aladim, A.K.
Ali, Abdulraoof I.
Boujdaria, Kais
Journal Title
Journal ISSN
Volume Title
Publisher
Springer
Abstract
Please read abstract in the article.
Description
DATA AVAILABILITY : Data will be made available on reasonable request.
Keywords
PIN diodes, Mn-doped-Ge quantum dots, Molecular beam epitaxy, Stranski-Krastanov, Photodetector, Solar cell applications, Ultra-high vacuum molecular beam epitaxy (UHV-MBE), SDG-09: Industry, innovation and infrastructure
Sustainable Development Goals
SDG-09: Industry, innovation and infrastructure
Citation
Yahyaoui, M., Aouassa, M., Bouabdellaoui, M. et al. MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications. Applied Physics A 130, 762 (2024). https://doi.org/10.1007/s00339-024-07926-5.