A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes
| dc.contributor.author | Ahmed, M.A.M. | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Nel, Jacqueline Margot | |
| dc.contributor.author | Venter, A. | |
| dc.date.accessioned | 2024-10-30T09:07:38Z | |
| dc.date.available | 2024-10-30T09:07:38Z | |
| dc.date.issued | 2024-09 | |
| dc.description | DATA AVAILABILITY : Data used in this study will be available upon request from the corresponding author. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2024 | en_US |
| dc.description.sdg | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.description.sponsorship | Nelson Mandela University (NMU), South Africa. Open access funding provided by Nelson Mandela University. | en_US |
| dc.description.uri | https://link.springer.com/journal/10854 | en_US |
| dc.identifier.citation | Ahmed, M.A.M., Auret, F.D., Nel, J.M. et al. A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes. Journal of Materials Science: Materials in Electronics 35, 1797 (2024). https://doi.org/10.1007/s10854-024-13507-2. | en_US |
| dc.identifier.issn | 0957-4522 (print) | |
| dc.identifier.issn | 1573-482X (online) | |
| dc.identifier.other | 10.1007/s10854-024-13507-2 | |
| dc.identifier.uri | http://hdl.handle.net/2263/98837 | |
| dc.language.iso | en | en_US |
| dc.publisher | Springer | en_US |
| dc.rights | © The Author(s), 2024. Open Access. This article is licensed under a Creative Commons Attribution 4.0 International License. | en_US |
| dc.subject | Schottky barrier diodes (SBDs) | en_US |
| dc.subject | 5.4 MeV alpha particles | en_US |
| dc.subject | Transmission electron microscopy (TEM) | en_US |
| dc.subject | Energy dispersive spectroscopy (EDS) | en_US |
| dc.subject | Deep level transient spectroscopy (DLTS) | en_US |
| dc.subject | SDG-09: Industry, innovation and infrastructure | en_US |
| dc.title | A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes | en_US |
| dc.type | Article | en_US |