A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

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Ahmed_DLTS_2024.pdf (2.53 MB)

Date

2024-09

Authors

Ahmed, M.A.M.
Auret, Francois Danie
Nel, Jacqueline Margot
Venter, A.

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

Please read abstract in the article.

Description

DATA AVAILABILITY : Data used in this study will be available upon request from the corresponding author.

Keywords

Schottky barrier diodes (SBDs), 5.4 MeV alpha particles, Transmission electron microscopy (TEM), Energy dispersive spectroscopy (EDS), Deep level transient spectroscopy (DLTS), SDG-09: Industry, innovation and infrastructure

Sustainable Development Goals

SDG-09: Industry, innovation and infrastructure

Citation

Ahmed, M.A.M., Auret, F.D., Nel, J.M. et al. A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes. Journal of Materials Science: Materials in Electronics 35, 1797 (2024). https://doi.org/10.1007/s10854-024-13507-2.

URI

http://hdl.handle.net/2263/98837

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Research Articles (Physics)
Research Articles (University of Pretoria)
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