Hot carrier degradation of mixed-mode polysilicon light emitting diodes

Loading...
Thumbnail Image

Authors

Goosen, Marius Eugene
Venter, Petrus J.
Faure, Nicolaas M.
Msomi, Promise N.
Schoeman, Johan
Joubert, Trudi-Heleen

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

This paper investigates the degradation and reliability of polysilicon light emitters implemented in a standard 0.35 μm CMOS process. A total of 48 identical hot carrier electroluminescent emitters were subjected to high temperature operating life tests. The results show the first reported degradation in reverse biased silicon light emitter intensity, consistent with hot carrier degradation. The degradation is shown to be strongly dependent on the stress current, while little to no dependence on temperature stress is noticed. With the device operating in a mixed-mode regime, it is postulated that hydrogen dissociation and generation of interface states through hot carrier stress increases the non-radiative tunnelling mechanisms reducing the optical intensity with increased stress. Degradation model parameters are extracted to predict light emitter lifetime and to provide long life design criteria for these polysilicon light emitters.

Description

DATA AVAILABILITY : The data that has been used is confidential. The raw/processed data required to reproduce these findings cannot be shared at this time due to legal reasons. This may be provided on request.

Keywords

Reliability, Silicon light emitting device, Silicon electroluminescence, Hydrogen migration model, Hot carrier degradation, Avalanche light emitting diodes

Sustainable Development Goals

Citation

Goosen, M.E., Venter, P.J., Fauré, N.M. et al. 2023, 'Hot carrier degradation of mixed-mode polysilicon light emitting diodes', Materials Science and Engineering: B, vol. 292, art. 116391, pp. 1-10, doi : 10.1016/j.mseb.2023.116391.