Investigating the structural changes induced by SHI on W–SiC samples

dc.contributor.authorThabethe, Thabsile Theodora
dc.contributor.authorNtsoane, Tshepo Paul
dc.contributor.authorBiira, Saphina
dc.contributor.authorNjoroge, Eric Gitau
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.authorSkuratov, Vladimir Alexeevich
dc.contributor.authorMalherbe, Johan B.
dc.contributor.emailthabsile.thabethe@up.ac.zaen_ZA
dc.date.accessioned2020-04-07T11:51:42Z
dc.date.issued2020-04
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2021-04-01
dc.description.librarianhj2020en_ZA
dc.description.sponsorshipThe National Research Foundation (NRF) of South Africaen_ZA
dc.description.urihttp://www.journals.elsevier.com/vacuumen_ZA
dc.identifier.citationThabethe, T.T., Ntsoane, T.P., Biira, S. et al. 2020, 'Investigating the structural changes induced by SHI on W–SiC samples', Vacuum, vol. 174, art. 109230, pp. 1-5.en_ZA
dc.identifier.issn0042-207X (print)
dc.identifier.issn1879-2715 (online)
dc.identifier.other10.1016/j.vacuum.2020.109230
dc.identifier.urihttp://hdl.handle.net/2263/74075
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Vacuum. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Vacuum, vol. 174, art. 109230, pp. 1-5, 2020. doi : 10.1016/j.vacuum.2020.109230.en_ZA
dc.subjectSwift heavy ion (SHI)en_ZA
dc.subjectRutherford backscattering spectrometry (RBS)en_ZA
dc.subjectScanning electron microscopy (SEM)en_ZA
dc.subjectX-ray diffraction (XRD)en_ZA
dc.subjectTungstenen_ZA
dc.subjectThin filmen_ZA
dc.subjectReactionen_ZA
dc.subjectIrradiationen_ZA
dc.subjectMetal-silicon carbide (m-SiC)en_ZA
dc.titleInvestigating the structural changes induced by SHI on W–SiC samplesen_ZA
dc.typePostprint Articleen_ZA

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