Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range
| dc.contributor.author | Njoroge, Eric Gitau | |
| dc.contributor.author | Hlatshwayo, Thulani Thokozani | |
| dc.contributor.author | Mokgadi, Thapelo Freddy | |
| dc.contributor.author | Thabethe, Thabsile Theodora | |
| dc.contributor.author | Skuratov, Vladimir Alexeevich | |
| dc.contributor.email | eric.njoroge@up.ac.za | en_US |
| dc.date.accessioned | 2024-02-22T07:03:45Z | |
| dc.date.available | 2024-02-22T07:03:45Z | |
| dc.date.issued | 2023-08 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | en_US |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.department | Physics | en_US |
| dc.description.librarian | hj2024 | en_US |
| dc.description.sdg | None | en_US |
| dc.description.sponsorship | The National Research Foundation (NRF) of South Africa. | en_US |
| dc.description.uri | https://www.elsevier.com/locate/mtcomm | en_US |
| dc.identifier.citation | Njoroge, E., Hlatshwayo, T., Mokgadi, T. et al. 2023, 'Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range', Materials Today Communications, vol. 36, art. 106631, pp. 1-10, doi : 10.1016/j.mtcomm.2023.106631. | en_US |
| dc.identifier.issn | 2352-4928 (online) | |
| dc.identifier.other | 10.1016/j.mtcomm.2023.106631 | |
| dc.identifier.uri | http://hdl.handle.net/2263/94814 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2023 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license. | en_US |
| dc.subject | Iridium | en_US |
| dc.subject | Silicides | en_US |
| dc.subject | Silicon carbide | en_US |
| dc.subject | Rutherford backscattering spectrometry (RBS) | en_US |
| dc.subject | Grazing incidence X-ray diffraction (GIXRD) | en_US |
| dc.subject | Scanning electron microscopy (SEM) | en_US |
| dc.subject | Raman spectroscopy | en_US |
| dc.title | Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range | en_US |
| dc.type | Article | en_US |