Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range
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Date
Authors
Njoroge, Eric Gitau
Hlatshwayo, Thulani Thokozani
Mokgadi, Thapelo Freddy
Thabethe, Thabsile Theodora
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Please read abstract in the article.
Description
DATA AVAILABILITY :
Data will be made available on request.
Keywords
Iridium, Silicides, Silicon carbide, Rutherford backscattering spectrometry (RBS), Grazing incidence X-ray diffraction (GIXRD), Scanning electron microscopy (SEM), Raman spectroscopy
Sustainable Development Goals
None
Citation
Njoroge, E., Hlatshwayo, T., Mokgadi, T. et al. 2023, 'Solid-state reactions between iridium thin films and silicon carbide in the 700 °C to 1000 °C temperature range', Materials Today Communications, vol. 36, art. 106631, pp. 1-10, doi : 10.1016/j.mtcomm.2023.106631.