Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC
| dc.contributor.author | Igumbor, E. | |
| dc.contributor.author | Dongho-Nguimdo, G.M. | |
| dc.contributor.author | Mapasha, Refilwe Edwin | |
| dc.contributor.author | Omotoso, E. | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.email | wmeyer@up.ac.za | en_ZA |
| dc.date.accessioned | 2021-11-24T07:13:18Z | |
| dc.date.available | 2021-11-24T07:13:18Z | |
| dc.date.issued | 2020-07 | |
| dc.description.abstract | Please read the abstract in the article. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.librarian | hj2021 | en_ZA |
| dc.description.sponsorship | The National Research foundation (NRF) of South Africa, the University of South Africa (UNISA) and the Center for High Performance Computing (CHPC) Cape Town. | en_ZA |
| dc.description.uri | http://www.elsevier.com/locate/jpcs | en_ZA |
| dc.identifier.citation | Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. 2020, 'Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC', Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6. | en_ZA |
| dc.identifier.issn | 0022-3697 (print) | |
| dc.identifier.issn | 1879-2553 (online) | |
| dc.identifier.other | 10.1016/j.jpcs.2020.109448 | |
| dc.identifier.uri | http://hdl.handle.net/2263/82814 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Elsevier | en_ZA |
| dc.rights | © 2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Journal of Physics and Chemistry of Solids. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6, 2020. doi : 10.1016/j.jpcs.2020.109448. | en_ZA |
| dc.subject | Defect | en_ZA |
| dc.subject | Formation energy | en_ZA |
| dc.subject | Charge state | en_ZA |
| dc.subject | Substitution pair | en_ZA |
| dc.title | Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC | en_ZA |
| dc.type | Postprint Article | en_ZA |