Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC
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Date
Authors
Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Omotoso, E.
Meyer, Walter Ernst
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Please read the abstract in the article.
Description
Keywords
Defect, Formation energy, Charge state, Substitution pair
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Citation
Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. 2020, 'Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC', Journal of Physics and Chemistry of Solids, vol. 142, art. 109448, pp. 1-6.