Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices
| dc.contributor.author | Igumbor, Emmanuel | |
| dc.contributor.author | Ajeh, Patience | |
| dc.contributor.author | Mapasha, Refilwe Edwin | |
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.contributor.author | Raji, Abdulrafiu | |
| dc.date.accessioned | 2026-04-08T12:01:39Z | |
| dc.date.available | 2026-04-08T12:01:39Z | |
| dc.date.issued | 2026-06 | |
| dc.description | DATA AVAILABILITY : Data will be made available on request. | |
| dc.description.abstract | Please read abstract in the article. HIGHLIGHTS • Hybrid DFT was used to study the effects of group III dopants on 2D SiC.. • Group III dopant in 2D monolayer SiC distorts its lattice, inducing varying strain. • Group III dopants at C sites induce magnetism, enabling spintronic 2D SiC devices. • This study reveals how group III dopants tune electronic and magnetic properties of 2D SiC. | |
| dc.description.department | Physics | |
| dc.description.librarian | hj2026 | |
| dc.description.sdg | SDG-09: Industry, innovation and infrastructure | |
| dc.description.sponsorship | The University of Johannesburg, South Africa for funding support; the African University of Science and Technology, Abuja for enabling this research; the University of Pretoria and the Center for High Performance Computing (CHPC) Cape Town, South Africa for providing computational resources. | |
| dc.description.uri | https://www.elsevier.com/locate/mssp | |
| dc.identifier.citation | Igumbor, E., Ajeh, P., Mapasha, E. et al. 2026, 'Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices', Materials Science in Semiconductor Processing, vol. 207, art. 110465, pp. 1-11, doi : 10.1016/j.mssp.2026.110465. | |
| dc.identifier.issn | 1369-8001 (print) | |
| dc.identifier.issn | 1873-4081 (online) | |
| dc.identifier.other | 10.1016/j.mssp.2026.110465 | |
| dc.identifier.uri | http://hdl.handle.net/2263/109471 | |
| dc.language.iso | en | |
| dc.publisher | Elsevier | |
| dc.rights | © 2026 Elsevier Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 207, art. 110465, pp. 1-11, doi : 10.1016/j.mssp.2026.110465. | |
| dc.subject | Dopant | |
| dc.subject | Formation energy | |
| dc.subject | Charge transfer | |
| dc.subject | Magnetic moment | |
| dc.subject | Density of states | |
| dc.subject | Defect concentration | |
| dc.title | Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices | |
| dc.type | Preprint Article |