Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices

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Date

2026-06

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Elsevier

Abstract

Please read abstract in the article. HIGHLIGHTS • Hybrid DFT was used to study the effects of group III dopants on 2D SiC.. • Group III dopant in 2D monolayer SiC distorts its lattice, inducing varying strain. • Group III dopants at C sites induce magnetism, enabling spintronic 2D SiC devices. • This study reveals how group III dopants tune electronic and magnetic properties of 2D SiC.

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DATA AVAILABILITY : Data will be made available on request.

Keywords

Dopant, Formation energy, Charge transfer, Magnetic moment, Density of states, Defect concentration

Sustainable Development Goals

SDG-09: Industry, innovation and infrastructure

Citation

Igumbor, E., Ajeh, P., Mapasha, E. et al. 2026, 'Defect engineering with group III dopants in 2D monolayer SiC for improved electronic devices', Materials Science in Semiconductor Processing, vol. 207, art. 110465, pp. 1-11, doi : 10.1016/j.mssp.2026.110465.

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http://hdl.handle.net/2263/109471

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