Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge

dc.contributor.authorIgumbor, E.
dc.contributor.authorDongho-Nguimdo, G.M.
dc.contributor.authorMapasha, Refilwe Edwin
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2019-06-25T14:27:54Z
dc.date.issued2019-08
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2020-08-01
dc.description.librarianhj2019en_ZA
dc.description.sponsorshipThis work is based on the research supported partly by National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).en_ZA
dc.description.urihttp://link.springer.com/journal/10853en_ZA
dc.identifier.citationIgumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge. Journal of Materials Science (2019) 54: 10798-10808. https://doi.org/10.1007/s10853-019-03627-0.en_ZA
dc.identifier.issn0022-2461 (print)
dc.identifier.issn1573-4803 (online)
dc.identifier.other10.1007/s10853-019-03627-0
dc.identifier.urihttp://hdl.handle.net/2263/70299
dc.language.isoenen_ZA
dc.publisherSpringeren_ZA
dc.rights© Springer Science+Business Media, LLC, part of Springer Nature 2019. The original publication is available at : http://link.springer.comjournal/10853.en_ZA
dc.subjectHybrid density functional theoryen_ZA
dc.subjectHybrid functional calculationen_ZA
dc.subjectAb-initioen_ZA
dc.subjectGermanium (Ge)en_ZA
dc.subjectElectronic propertiesen_ZA
dc.subjectDefect levelsen_ZA
dc.subjectGroup III substitutionen_ZA
dc.titleElectronic properties and defect levels induced by group III substitution–interstitial complexes in Geen_ZA
dc.typePostprint Articleen_ZA

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