Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge
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Date
Authors
Igumbor, E.
Dongho-Nguimdo, G.M.
Mapasha, Refilwe Edwin
Meyer, Walter Ernst
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Publisher
Springer
Abstract
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Keywords
Hybrid density functional theory, Hybrid functional calculation, Ab-initio, Germanium (Ge), Electronic properties, Defect levels, Group III substitution
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Citation
Igumbor, E., Dongho-Nguimdo, G.M., Mapasha, R.E. et al. Electronic properties and defect levels induced by group III substitution–interstitial complexes in Ge. Journal of Materials Science (2019) 54: 10798-10808. https://doi.org/10.1007/s10853-019-03627-0.