In situ study of low-temperature irradiation-induced defects in silicon carbide
| dc.contributor.author | Tunhuma, Shandirai Malven | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Danga, Helga Tariro | |
| dc.contributor.author | Nel, Jacqueline Margot | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.email | malven.tunhuma@up.ac.za | en_ZA |
| dc.date.accessioned | 2020-03-02T06:30:11Z | |
| dc.date.issued | 2019-06 | |
| dc.description.abstract | Please read abstract in the article. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.embargo | 2020-03-22 | |
| dc.description.librarian | hj2020 | en_ZA |
| dc.description.sponsorship | The National Research Foundation (NRF) (Grant No. 11174) and the University of Pretoria. | en_ZA |
| dc.description.uri | http://link.springer.com/journal/11664 | en_ZA |
| dc.identifier.citation | Tunhuma, S.M., Auret, F.D., Danga, H.T. et al. In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide. Journal of Electronic Materials 48, 3849–3853 (2019). https://doi.org/10.1007/s11664-019-07145-2. | en_ZA |
| dc.identifier.issn | 0361-5235 (print) | |
| dc.identifier.issn | 1543-186X (online) | |
| dc.identifier.other | 10.1007/s11664-019-07145-2 | |
| dc.identifier.uri | http://hdl.handle.net/2263/73616 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Springer | en_ZA |
| dc.rights | © 2019 The Minerals, Metals & Materials Society. The original publication is available at : http://link.springer.com/journal/11664. | en_ZA |
| dc.subject | Native defects | en_ZA |
| dc.subject | Low-temperature irradiation | en_ZA |
| dc.subject | 4H-SiC | en_ZA |
| dc.subject | Deep-level transient spectroscopy (DLTS) | en_ZA |
| dc.subject | Silicon carbide (SiC) | en_ZA |
| dc.title | In situ study of low-temperature irradiation-induced defects in silicon carbide | en_ZA |
| dc.type | Postprint Article | en_ZA |