In situ study of low-temperature irradiation-induced defects in silicon carbide
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Date
Authors
Tunhuma, Shandirai Malven
Auret, Francois Danie
Danga, Helga Tariro
Nel, Jacqueline Margot
Diale, M. (Mmantsae Moche)
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Journal ISSN
Volume Title
Publisher
Springer
Abstract
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Description
Keywords
Native defects, Low-temperature irradiation, 4H-SiC, Deep-level transient spectroscopy (DLTS), Silicon carbide (SiC)
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Citation
Tunhuma, S.M., Auret, F.D., Danga, H.T. et al. In Situ Study of Low-Temperature Irradiation-Induced Defects in Silicon Carbide. Journal of Electronic Materials 48, 3849–3853 (2019). https://doi.org/10.1007/s11664-019-07145-2.