Controlled etching of the SiC layer in TRISO coated particles using CF4 in a non-thermal plasma

dc.contributor.authorKoen, Reiner
dc.contributor.authorVan der Walt, Isak
dc.contributor.authorJansen, Arnold Alexander
dc.contributor.authorCrouse, Philippus L.
dc.date.accessioned2021-11-02T11:56:32Z
dc.date.available2021-11-02T11:56:32Z
dc.date.issued2020-04-03
dc.description.abstractThe fluorine radicals generated in a CF4 non-equilibrium RF plasma readily react with silicon carbide (SiC) forming volatile SiF4 and CF4. In a spouted-bed configuration this enables the complete removal of the SiC layer of TRISO coated particles in 14–15 h with excellent control of the process for analysis and quality control of the coatings. The process kinetics is mass transfer controlled.en_ZA
dc.description.abstractDie fluoorradikale wat in ’n nie-termiese CF4-radiofrekwensieplasma (glimontladingsplasma) opgewek word, reageer geredelik met silikoonkarbied (SiC) met die vorming van vlugtige SiF4 en CF4. In ’n spuitbedopstelling wat hier gebruik word, bewerkstellig dit binne 14 tot 15 h die volledige verwydering van die SiC-deklaag vanaf TRISO-partikels, met uitstekende beheer oor die proses vir analitiese en kwaliteitsbeheerdoeleindes. Die proseskinetika word deur massa-oordrag beheer.en_ZA
dc.description.departmentChemical Engineeringen_ZA
dc.description.librarianam2021en_ZA
dc.description.urihttp://www.satnt.ac.zaen_ZA
dc.identifier.citationRenier Koen, Izak J van der Walt, Arnold A Jansen, Philippus L Crouse, Controlled etching of the SiC layer in TRISO coated par􀆟 cles using CF4 in a non-thermal plasma, Suid-Afrikaanse Tydskrif vir Natuurwetenskap en Tegnologie 39(1) (2020). https://doi.org/10.36303/SATNT.2020.39.1.748.en_ZA
dc.identifier.issn0254-3486 (print)
dc.identifier.issn2222-4173 (online)
dc.identifier.other10.36303/ SATNT.2020.39.1.748
dc.identifier.urihttp://hdl.handle.net/2263/82527
dc.language.isoenen_ZA
dc.publisherAOSIS Open Journalsen_ZA
dc.rights© 2020. Authors. Licensee: Die Suid- Afrikaanse Akademie vir Wetenskap en Kuns. This work is licensed under the Creative Commons Attribution License.en_ZA
dc.subjectEtchingen_ZA
dc.subjectSiC layeren_ZA
dc.subjectNon-thermal plasmaen_ZA
dc.subjectEtsingen_ZA
dc.subjectSiC-laagen_ZA
dc.subjectNie-termiese CF4 plasmaen_ZA
dc.subjectSilicon carbide (SiC)en_ZA
dc.subjectSilikoonkarbied (SiC)en_ZA
dc.titleControlled etching of the SiC layer in TRISO coated particles using CF4 in a non-thermal plasmaen_ZA
dc.title.alternativeBeheerde etsing van die SiC-laag in TRISO-bedekte partikels in ’n nie-termiese CF4 plasmaen_ZA
dc.typeArticleen_ZA

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