Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC

dc.contributor.authorAbdalla, Zaki Adam Yousif
dc.contributor.authorIsmail, Mahjoub Yagoub Abdalla
dc.contributor.authorNjoroge, Eric Gitau
dc.contributor.authorWendler, E.
dc.contributor.authorMalherbe, Johan B.
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.emailu17208620@tuks.co.zaen_US
dc.date.accessioned2022-07-18T10:25:30Z
dc.date.available2022-07-18T10:25:30Z
dc.date.issued2021-01
dc.description.abstractP'lease read abstract in the article.en_US
dc.description.departmentPhysicsen_US
dc.description.librarianhj2022en_US
dc.description.sponsorshipThe National Research Foundation and The World Academy of Science.en_US
dc.description.urihttp://www.elsevier.com/locate/nimben_US
dc.identifier.citationAbdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2021, 'Effect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, doi : 10.1016/j.nimb.2020.08.022.en_US
dc.identifier.issn0168-583X (print)
dc.identifier.issn1872-9584 (online)
dc.identifier.other10.1016/j.nimb.2020.08.022
dc.identifier.urihttps://repository.up.ac.za/handle/2263/86283
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2021 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 487, pp. 30-37, 2021. doi : 10.1016/j.nimb.2020.08.022.en_US
dc.subjectIon implantationen_US
dc.subjectPolycrystalline SiCen_US
dc.subjectRecrystallizationen_US
dc.subjectDiffusionen_US
dc.subjectSilicon carbide (SiC)en_US
dc.titleEffect of heat treatment on the migration behaviour of selenium implanted into polycrystalline SiCen_US
dc.typePostprint Articleen_US

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