A novel CMOS Hall effect sensor
| dc.contributor.author | Mellet, Dieter Sydney-Charles | |
| dc.contributor.author | Du Plessis, M. | |
| dc.date.accessioned | 2014-06-04T08:38:18Z | |
| dc.date.available | 2014-06-04T08:38:18Z | |
| dc.date.issued | 2014-05 | |
| dc.description.abstract | This paper reports on a new technique for sensing the Hall effect in an integrated CMOS device. Contrary totraditional Hall plates where sensor contacts comprise of highly doped, low ohmic contacts, the proposedsensor makes use of a parasitic vertical pnp bipolar junction transistor (BJT) to sense and amplify the Hallcurrent caused by the Lorentz force in the presence of a perpendicular magnetic field. The Hall effectappears as a current through the emitter of the BJT. The BJT forward gain implies a direct gain of at leastˇ + 1 in the measured signal in comparison to traditional methods. | en_US |
| dc.description.librarian | hb2014 | en_US |
| dc.description.uri | http://www.elsevier.com/locate/sna | en_US |
| dc.identifier.citation | Mellet, DS & Du Plessis, M 2014, 'A novel CMOS Hall effect sensor', Sensors and Actuators, A : Physical, vol. 211, pp. 60-66. | en_US |
| dc.identifier.issn | 0924-4247 (print) | |
| dc.identifier.issn | 1873-3069 (online) | |
| dc.identifier.other | 10.1016/j.sna.2014.02.026 | |
| dc.identifier.uri | http://hdl.handle.net/2263/39977 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2014 Elsevier B.V. All rights reserved.Notice : this is the author’s version of a work that was accepted for publication in Sensors and Actuators A: Physical.Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Sensors and Actuators A: Physica, vol. 211, pp. 60-66, 2014. doi : 10.1016/j.sna.2014.02.026. | en_US |
| dc.subject | Hall effect | en_US |
| dc.subject | CMOS | en_US |
| dc.subject | Hall current | en_US |
| dc.title | A novel CMOS Hall effect sensor | en_US |
| dc.type | Postprint Article | en_US |