Trivalent atom defect-complex induced defect levels in germanium for enhanced Ge-based device performance

dc.contributor.authorIgumbor, Emmanuel
dc.contributor.authorDongho-Nguimdo, Moise
dc.contributor.authorMapasha, Refilwe Edwin
dc.contributor.authorKalimuthu, Rajendran
dc.contributor.authorRaji, Abdulrafiu
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.emailwmeyer@up.ac.zaen_US
dc.date.accessioned2024-03-06T08:44:39Z
dc.date.issued2024-04
dc.description.abstractPlease read abstract in the article.en_US
dc.description.departmentPhysicsen_US
dc.description.embargo2025-01-26
dc.description.librarianhj2024en_US
dc.description.sdgNoneen_US
dc.description.urihttps://link.springer.com/journal/11664en_US
dc.identifier.citationIgumbor, E., Dongho-Nguimdo, M., Mapasha, E. et al. Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance. Journal of Electronic Materials 53, 1903–1912 (2024). https://doi.org/10.1007/s11664-023-10902-z.en_US
dc.identifier.issn0361-5235 (print)
dc.identifier.issn1543-186X (online)
dc.identifier.other10.1007/s11664-023-10902-z
dc.identifier.urihttp://hdl.handle.net/2263/95093
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.rights© The Minerals, Metals & Materials Society 2024. The original publication is available at : http://link.springer.com/journal/11664.en_US
dc.subjectGermaniumen_US
dc.subjectFormation energyen_US
dc.subjectBinding energyen_US
dc.subjectDefect levelen_US
dc.subjectSubstitution-interstitialen_US
dc.subjectDefect complexesen_US
dc.subjectDensity functional theory (DFT)en_US
dc.titleTrivalent atom defect-complex induced defect levels in germanium for enhanced Ge-based device performanceen_US
dc.typePostprint Articleen_US

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