Trivalent atom defect-complex induced defect levels in germanium for enhanced Ge-based device performance

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Igumbor_Trivalent_2024.pdf (1.63 MB)

Date

2024-04

Authors

Igumbor, Emmanuel
Dongho-Nguimdo, Moise
Mapasha, Refilwe Edwin
Kalimuthu, Rajendran
Raji, Abdulrafiu
Meyer, Walter Ernst

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Publisher

Springer

Abstract

Please read abstract in the article.

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Keywords

Germanium, Formation energy, Binding energy, Defect level, Substitution-interstitial, Defect complexes, Density functional theory (DFT)

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None

Citation

Igumbor, E., Dongho-Nguimdo, M., Mapasha, E. et al. Trivalent Atom Defect-Complex Induced Defect Levels in Germanium for Enhanced Ge‑Based Device Performance. Journal of Electronic Materials 53, 1903–1912 (2024). https://doi.org/10.1007/s11664-023-10902-z.

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http://hdl.handle.net/2263/95093

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Research Articles (Physics)
Research Articles (University of Pretoria)
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