Surface roughness of InP after N+2 bombardment : Ion areic dose dependence
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Publisher
University of Pretoria
Abstract
Please read the abstract in the section front of this document.
Description
Dissertation (MSc (Physics))--University of Pretoria, 2006.
Keywords
Electronics materials, Indium compounds, Semiconducrtors, Surface roughness, Indium phosphide, UCTD
Sustainable Development Goals
Citation
Osman, SOS 2004, Surface roughness of InP after N+2 bombardment: Ion areic dose dependence, MSc dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/24608 >