Ar plasma induced deep levels in epitaxial n-GaAs
| dc.contributor.author | Venter, Andre | |
| dc.contributor.author | Nyamhere, Cloud | |
| dc.contributor.author | Botha, J.R. | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Janse van Rensburg, J.P. | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Coelho, Sergio M.M. | |
| dc.contributor.author | Kolkovsky, V.I. | |
| dc.date.accessioned | 2012-03-13T06:13:08Z | |
| dc.date.available | 2012-03-13T06:13:08Z | |
| dc.date.issued | 2012-03-08 | |
| dc.description.abstract | Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV, Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV, labelled E10 and having a trap signature similar to irradiation induced defect E1, appears to be metastable. Ec - 0.31 eV and Ec - 0.61 eV are metastable too and they are similar to the M3/M4 defect configuration present in hydrogen plasma exposed n-GaAs. | en |
| dc.description.librarian | nf2012 | en |
| dc.description.sponsorship | South African National Research Foundation | en_US |
| dc.description.uri | http://jap.aip.org/ | en_US |
| dc.identifier.citation | Venter, A, Nyamhere, C, Botha, JR, Auret, FD, Van Rensburg, PJJ, Meyer, WE, Coelho, SMM & Kolkovsky, VI 2012, 'Ar plasma induced deep levels in epitaxial n-GaAs', Journal of Applied Physics, vol. 111, no. 013703, pp. 1-4. | en |
| dc.identifier.issn | 0021-8979 (print) | |
| dc.identifier.issn | 1089-7550 (online) | |
| dc.identifier.other | 10.1063/1.3673322 | |
| dc.identifier.uri | http://hdl.handle.net/2263/18424 | |
| dc.language.iso | en | en_US |
| dc.publisher | American Institute of Physics | en_US |
| dc.rights | © 2012 American Institute of Physics | en |
| dc.subject | Ar plasma etching | en |
| dc.subject | Epitaxial n-GaAs | en |
| dc.subject | Low energy ICP etching | en |
| dc.subject.lcsh | Plasma etching | en |
| dc.subject.lcsh | Epitaxy | en |
| dc.title | Ar plasma induced deep levels in epitaxial n-GaAs | en |
| dc.type | Article | en |