Ar plasma induced deep levels in epitaxial n-GaAs
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Date
Authors
Venter, Andre
Nyamhere, Cloud
Botha, J.R.
Auret, Francois Danie
Janse van Rensburg, J.P.
Meyer, Walter Ernst
Coelho, Sergio M.M.
Kolkovsky, V.I.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics
Abstract
Ar plasma etching of n-type (Si doped) GaAs introduces several electron traps (Ec - 0.04 eV,
Ec - 0.07 eV, Ec - 0.19 eV, Ec - 0.31 eV, Ec - 0.53 eV, and Ec - 0.61 eV). The trap, Ec - 0.04 eV,
labelled E10 and having a trap signature similar to irradiation induced defect E1, appears to be
metastable. Ec - 0.31 eV and Ec - 0.61 eV are metastable too and they are similar to the M3/M4
defect configuration present in hydrogen plasma exposed n-GaAs.
Description
Keywords
Ar plasma etching, Epitaxial n-GaAs, Low energy ICP etching
Sustainable Development Goals
Citation
Venter, A, Nyamhere, C, Botha, JR, Auret, FD, Van Rensburg, PJJ, Meyer, WE, Coelho, SMM & Kolkovsky, VI 2012, 'Ar plasma induced deep levels in epitaxial n-GaAs', Journal of Applied Physics, vol. 111, no. 013703, pp. 1-4.