Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC
| dc.contributor.author | Omotoso, Ezekiel | |
| dc.contributor.author | Paradzah, Alexander Tapera | |
| dc.contributor.author | Legodi, Matshisa Johannes | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.email | ezekiel.omotoso@up.ac.za | en_ZA |
| dc.date.accessioned | 2017-11-10T09:29:59Z | |
| dc.date.issued | 2017-10 | |
| dc.description.abstract | Please read abstract in the article. | en_ZA |
| dc.description.department | Physics | en_ZA |
| dc.description.embargo | 2018-10-15 | |
| dc.description.librarian | hj2017 | en_ZA |
| dc.description.sponsorship | The University of Pretoria; Postdoctoral Fellowship Program of the University of Pretoria and the National Research Foundation (NRF) of South Africa. | en_ZA |
| dc.description.uri | http://www.elsevier.com/locate/nimb | en_ZA |
| dc.identifier.citation | Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E. & Auret, F.D. 2017, 'Electrical characterization of electron irradiated and annealed lowly - doped 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45. | en_ZA |
| dc.identifier.issn | 0168-583X (print) | |
| dc.identifier.issn | 1872-9584 (online) | |
| dc.identifier.other | 10.1016/j.nimb.2017.05.042 | |
| dc.identifier.uri | http://hdl.handle.net/2263/63094 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Elsevier | en_ZA |
| dc.rights | © 2017 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45, 2017. doi : 10.1016/j.nimb.2017.05.042. | en_ZA |
| dc.subject | High energy electron (HEE) | en_ZA |
| dc.subject | Irradiation | en_ZA |
| dc.subject | 4H-SiC | en_ZA |
| dc.subject | Schottky contacts | en_ZA |
| dc.subject | Deep level transient spectroscopy (DLTS) | en_ZA |
| dc.subject | Spectroscopy | en_ZA |
| dc.subject | Detectors | en_ZA |
| dc.subject | Defects | en_ZA |
| dc.subject | Schottky diodes | en_ZA |
| dc.subject | Deep levels | en_ZA |
| dc.subject | Band gap states | en_ZA |
| dc.subject | 4H–silicon carbide | en_ZA |
| dc.subject | Alpha-particle irradiation | en_ZA |
| dc.title | Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC | en_ZA |
| dc.type | Postprint Article | en_ZA |