Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC
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Date
Authors
Omotoso, Ezekiel
Paradzah, Alexander Tapera
Legodi, Matshisa Johannes
Diale, M. (Mmantsae Moche)
Meyer, Walter Ernst
Auret, Francois Danie
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Volume Title
Publisher
Elsevier
Abstract
Please read abstract in the article.
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Keywords
High energy electron (HEE), Irradiation, 4H-SiC, Schottky contacts, Deep level transient spectroscopy (DLTS), Spectroscopy, Detectors, Defects, Schottky diodes, Deep levels, Band gap states, 4H–silicon carbide, Alpha-particle irradiation
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Citation
Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E. & Auret, F.D. 2017, 'Electrical characterization of electron irradiated and annealed lowly - doped 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45.