Isothermal annealing of selenium (Se)-implanted silicon carbide : structural evolution and migration behavior of implanted Se
Loading...
Date
Authors
Abdalla, Zaki Adam Yousif
Njoroge, Eric Gitau
Mlambo, Mbuso
Motloung, Setumo Victor
Malherbe, Johan B.
Hlatshwayo, Thulani Thokozani
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Please read abstract in the article.
Description
Keywords
Ion implantation, Polycrystalline SiC, Isothermal annealing, Diffusion, Very high temperature gas cooled reactors (VHTGRs), Pebble bed modular reactor (PBMR), Silicon carbide (SiC)
Sustainable Development Goals
Citation
Abdalla, Z.A.Y., Njoroge, E.G., Mlambo, M. et al. 2022, 'Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se', Materials Chemistry and Physics, vol. 276, art. 125334, pp. 1-11.