Isothermal annealing of selenium (Se)-implanted silicon carbide : structural evolution and migration behavior of implanted Se

dc.contributor.authorAbdalla, Zaki Adam Yousif
dc.contributor.authorNjoroge, Eric Gitau
dc.contributor.authorMlambo, Mbuso
dc.contributor.authorMotloung, Setumo Victor
dc.contributor.authorMalherbe, Johan B.
dc.contributor.authorHlatshwayo, Thulani Thokozani
dc.contributor.emailu17208620@tuks.co.zaen_ZA
dc.date.accessioned2021-12-06T10:31:18Z
dc.date.issued2022-01
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2022-10-13
dc.description.librarianhj2021en_ZA
dc.description.sponsorshipThe National Research Foundation (NRF) of South Africaen_ZA
dc.description.urihttp://www.elsevier.com/locate/matchemphysen_ZA
dc.identifier.citationAbdalla, Z.A.Y., Njoroge, E.G., Mlambo, M. et al. 2022, 'Isothermal annealing of selenium (Se)-implanted silicon carbide: Structural evolution and migration behavior of implanted Se', Materials Chemistry and Physics, vol. 276, art. 125334, pp. 1-11.en_ZA
dc.identifier.issn0254-0584
dc.identifier.other10.1016/j.matchemphys.2021.125334
dc.identifier.urihttp://hdl.handle.net/2263/82969
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2021 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Chemistry and Physics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Chemistry and Physics, vol. 276, art. 125334, pp. 1-11, 2022. doi : 10.1016/j.matchemphys.2021.125334.en_ZA
dc.subjectIon implantationen_ZA
dc.subjectPolycrystalline SiCen_ZA
dc.subjectIsothermal annealingen_ZA
dc.subjectDiffusionen_ZA
dc.subjectVery high temperature gas cooled reactors (VHTGRs)en_ZA
dc.subjectPebble bed modular reactor (PBMR)en_ZA
dc.subjectSilicon carbide (SiC)en_ZA
dc.titleIsothermal annealing of selenium (Se)-implanted silicon carbide : structural evolution and migration behavior of implanted Seen_ZA
dc.typePostprint Articleen_ZA

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