Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Stability, electronic and defect levels induced by substitution of Al and P pair in 4H–SiC

Igumbor, E.; Dongho-Nguimdo, G.M.; Mapasha, Refilwe Edwin; Omotoso, E.; Meyer, Walter Ernst
URI: http://hdl.handle.net/2263/82814
Date: 2020-07

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