Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies

Habeenzu, Brilliant; Meyer, Walter Ernst; Stander, Tinus

dc.contributor.author	Habeenzu, Brilliant
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Stander, Tinus
dc.date.accessioned	2021-04-07T05:27:34Z
dc.date.available	2021-04-07T05:27:34Z
dc.date.issued	2020-04
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Carl and Emily Fuchs Institute for Micro-electronics (CEFIM)	en_ZA
dc.description.department	Electrical, Electronic and Computer Engineering	en_ZA
dc.description.department	Physics	en_ZA
dc.description.librarian	hj2021	en_ZA
dc.description.sponsorship	NUFFIC	en_ZA
dc.description.uri	https://www.elsevier.com/locate/microrel	en_ZA
dc.identifier.citation	Habeenzu, B., Meyer, W. & Stander, T. 2020, 'Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies', Microelectronics Reliability, vol. 107, art. 113598, pp. 1-12.	en_ZA
dc.identifier.issn	0026-2714
dc.identifier.other	10.1016/j.microrel.2020.113598
dc.identifier.uri	http://hdl.handle.net/2263/79326
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2020 Elsevier Ltd. All rights2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Microelectronics Reliability. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Microelectronics Reliability, vol. 107, art. 113598, pp. 1-12, 2020. doi : 10.1016/j.microrel.2020.113598.	en_ZA
dc.title	Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies	en_ZA
dc.type	Postprint Article	en_ZA