Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies

dc.contributor.authorHabeenzu, Brilliant
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorStander, Tinus
dc.contributor.emailbrilliant.habeenzu@tuks.co.zaen_ZA
dc.date.accessioned2021-04-07T05:27:34Z
dc.date.available2021-04-07T05:27:34Z
dc.date.issued2020-04
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentCarl and Emily Fuchs Institute for Micro-electronics (CEFIM)en_ZA
dc.description.departmentElectrical, Electronic and Computer Engineeringen_ZA
dc.description.departmentPhysicsen_ZA
dc.description.librarianhj2021en_ZA
dc.description.sponsorshipNUFFICen_ZA
dc.description.urihttps://www.elsevier.com/locate/microrelen_ZA
dc.identifier.citationHabeenzu, B., Meyer, W. & Stander, T. 2020, 'Effect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequencies', Microelectronics Reliability, vol. 107, art. 113598, pp. 1-12.en_ZA
dc.identifier.issn0026-2714
dc.identifier.other10.1016/j.microrel.2020.113598
dc.identifier.urihttp://hdl.handle.net/2263/79326
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2020 Elsevier Ltd. All rights2020 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Microelectronics Reliability. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Microelectronics Reliability, vol. 107, art. 113598, pp. 1-12, 2020. doi : 10.1016/j.microrel.2020.113598.en_ZA
dc.titleEffect of electron radiation on small-signal parameters of NMOS devices at mm-wave frequenciesen_ZA
dc.typePostprint Articleen_ZA

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