Statistical and fractal analysis of nitrogen ion implanted tantalum thin films

dc.contributor.author	Ramezani, A.H.
dc.contributor.author	Hoseinzadeh, Siamak
dc.contributor.author	Ebrahiminejad, Zh.
dc.date.accessioned	2020-12-02T09:45:31Z
dc.date.issued	2020-06
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Mechanical and Aeronautical Engineering	en_ZA
dc.description.embargo	2021-06-03
dc.description.librarian	hj2020	en_ZA
dc.description.uri	https://link.springer.com/journal/339	en_ZA
dc.identifier.citation	Ramezani, A.H., Hoseinzadeh, S. & Ebrahiminejad, Z. Statistical and fractal analysis of nitrogen ion implanted tantalum thin films. Applied Physics A 126, 481 (2020). https://doi.org/10.1007/s00339-020-03671-7.	en_ZA
dc.identifier.issn	0947-8396 (print)
dc.identifier.issn	1432-0630 (online)
dc.identifier.other	10.1007/s00339-020-03671-7
dc.identifier.uri	http://hdl.handle.net/2263/77242
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© Springer-Verlag GmbH Germany, part of Springer Nature 2020. The original publication is available at : https://link.springer.com/journal/339.	en_ZA
dc.subject	Tantalum bulk	en_ZA
dc.subject	Nitrogen ion implantation	en_ZA
dc.subject	Monofractal analysis	en_ZA
dc.subject	Fractal dimension	en_ZA
dc.title	Statistical and fractal analysis of nitrogen ion implanted tantalum thin films	en_ZA
dc.type	Postprint Article	en_ZA