Migration behaviour of selenium implanted into polycrystalline 3C–SiC

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Authors

Abdalla, Zaki Adam Yousif
Ismail, Mahjoub Yagoub Abdalla
Njoroge, Eric Gitau
Hlatshwayo, Thulani Thokozani
Wendler Elke
Malherbe, Johan B.

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Publisher

Elsevier

Abstract

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Keywords

Diffusion, Polycrystalline, Silicon carbide (SiC), Raman spectroscopy, Rutherford backscattering spectrometry (RBS), Scanning electron microscopy (SEM)

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Citation

Abdalla, Z.A.Y., Ismail, M.Y.A., Njoroge, E.G. et al. 2020, 'Migration behaviour of selenium implanted into polycrystalline 3C–SiC', Vacuum, vol. 175, art. 109235, pp. 1-6.