First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon

Abdurrazaq, Abdulgaffar; Raji, Abdulrafiu T.; Meyer, Walter Ernst

dc.contributor.author	Abdurrazaq, Abdulgaffar
dc.contributor.author	Raji, Abdulrafiu T.
dc.contributor.author	Meyer, Walter Ernst
dc.date.accessioned	2020-03-25T12:14:57Z
dc.date.issued	2020-11
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2021-07-16
dc.description.librarian	hj2020	en_ZA
dc.description.sponsorship	The National Research foundation (NRF) of South Africa (Grant speciﬁc unique reference number (UID) 98961).	en_ZA
dc.description.uri	https://www.springer.com/journal/12633	en_ZA
dc.identifier.citation	Abdurrazaq, A., Raji, A.T. & Meyer, W.E. First-principles Study of the Impact of Hydrogen Passivation on the Charge State Transition Levels of the CiOi(Sii)n Defect Complexes in Silicon. Silicon 12, 2699–2704 (2020). https://doi.org/10.1007/s12633-019-00367-3.	en_ZA
dc.identifier.issn	1876-990X (print)
dc.identifier.issn	1876-9918 (online)
dc.identifier.other	10.1007/s12633-019-00367-3
dc.identifier.uri	http://hdl.handle.net/2263/73833
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© Springer Nature B.V. 2020. The original publication is available at http://link.springer.com/journal/12633.	en_ZA
dc.subject	Formation energy	en_ZA
dc.subject	Defect complexes	en_ZA
dc.subject	Charge states	en_ZA
dc.subject	Binding energy	en_ZA
dc.subject	Defect level	en_ZA
dc.title	First-principles study of the impact of hydrogen passivation on the charge state transition levels of the CiOi(Sii)n defect complexes in silicon	en_ZA
dc.type	Postprint Article	en_ZA