Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon
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Date
Authors
Abdurrazaq, Abdulgaffar
Raji, Abdulrafiu T.
Meyer, Walter Ernst
Journal Title
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Volume Title
Publisher
Elsevier
Abstract
Please read abstract in the article.
Description
Keywords
Density functional theory (DFT), Formation energy, Passivation, Silicon, Charge state, Defect-complex
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Citation
Abdurrazaq, A., Raji, A.T. & Meyer, W.E. 2020, 'Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon', Materials Science in Semiconductor Processing, vol. 110, art. 104967.