Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon

dc.contributor.authorAbdurrazaq, Abdulgaffar
dc.contributor.authorRaji, Abdulrafiu T.
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2020-03-25T11:55:28Z
dc.date.available2020-03-25T11:55:28Z
dc.date.issued2020-05
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.librarianhj2020en_ZA
dc.description.sponsorshipThe National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).en_ZA
dc.description.urihttp://www.elsevier.com/locate/msspen_ZA
dc.identifier.citationAbdurrazaq, A., Raji, A.T. & Meyer, W.E. 2020, 'Ab initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in silicon', Materials Science in Semiconductor Processing, vol. 110, art. 104967.en_ZA
dc.identifier.issn1369-8001 (print)
dc.identifier.issn1873-4081 (online)
dc.identifier.other10.1016/j.mssp.2020.104967
dc.identifier.urihttp://hdl.handle.net/2263/73832
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2019 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 110, art. 104967, 2020. doi : 10.1016/j.mssp.2020.104967.en_ZA
dc.subjectDensity functional theory (DFT)en_ZA
dc.subjectFormation energyen_ZA
dc.subjectPassivationen_ZA
dc.subjectSiliconen_ZA
dc.subjectCharge stateen_ZA
dc.subjectDefect-complexen_ZA
dc.titleAb initio study of the effect of hydrogen passivation on boron-oxygen-carbon related defect complexes in siliconen_ZA
dc.typePreprint Articleen_ZA

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