Defect levels induced by double substitution of B and N in 4H-SiC
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Date
Authors
Igumbor, Emmanuel
Danga, Helga Tariro
Omotoso, Ezekiel
Meyer, Walter Ernst
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Publisher
Elsevier
Abstract
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Description
Keywords
Charge state, Defect, Uranium compounds, Substitutional impurities, Hybrid functional, Formation energy, Substitution, Equilibrium conditions, Electrically active defects, Double substitution, Conduction-band minimum, Substitution reactions, Silicon compounds, Silicon carbide, Energy gap
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Citation
Igumbor, E., Danga, H.T., Omotoso, E. et al. 2019, 'Defect levels induced by double substitution of B and N in 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46.