Defect levels induced by double substitution of B and N in 4H-SiC

Defect levels induced by double substitution of B and N in 4H-SiC

Igumbor, Emmanuel; Danga, Helga Tariro; Omotoso, Ezekiel; Meyer, Walter Ernst
URI: http://hdl.handle.net/2263/70300
Date: 2019-03

Abstract:

Please read abstract in the article.

Show full item record

Files in this item

Icon
Name: Igumbor_Defect_20 ...
Size: 1.322Mb
Format: PDF
Description: Postprint Article
View/Open

This item appears in the following Collection(s)