Defect levels induced by double substitution of B and N in 4H-SiC

dc.contributor.authorIgumbor, Emmanuel
dc.contributor.authorDanga, Helga Tariro
dc.contributor.authorOmotoso, Ezekiel
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2019-06-26T07:19:58Z
dc.date.issued2019-03
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2020-03-01
dc.description.librarianhj2019en_ZA
dc.description.sponsorshipThe National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). Emmanuel Igumbor acknowledge the University of South Africa for financial support through the Postdoctoral Research Fellowship programme.en_ZA
dc.description.urihttp://www.elsevier.com/locate/nimben_ZA
dc.identifier.citationIgumbor, E., Danga, H.T., Omotoso, E. et al. 2019, 'Defect levels induced by double substitution of B and N in 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46.en_ZA
dc.identifier.issn0168-583X (print)
dc.identifier.issn1872-9584 (online)
dc.identifier.other10.1016/j.nimb.2019.01.014
dc.identifier.urihttp://hdl.handle.net/2263/70300
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 442, pp. 41-46, 2019. doi : 10.1016/j.nimb.2019.01.014.en_ZA
dc.subjectCharge stateen_ZA
dc.subjectDefecten_ZA
dc.subjectUranium compoundsen_ZA
dc.subjectSubstitutional impuritiesen_ZA
dc.subjectHybrid functionalen_ZA
dc.subjectFormation energyen_ZA
dc.subjectSubstitutionen_ZA
dc.subjectEquilibrium conditionsen_ZA
dc.subjectElectrically active defectsen_ZA
dc.subjectDouble substitutionen_ZA
dc.subjectConduction-band minimumen_ZA
dc.subjectSubstitution reactionsen_ZA
dc.subjectSilicon compoundsen_ZA
dc.subjectSilicon carbideen_ZA
dc.subjectEnergy gapen_ZA
dc.titleDefect levels induced by double substitution of B and N in 4H-SiCen_ZA
dc.typePostprint Articleen_ZA

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