Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

Igumbor, Emmanuel; Olaniyan, Okikiola; Mapasha, Refilwe Edwin; Danga, Helga T.; Omotoso, Ezekiel; Meyer, W.E. (Walter Ernst)

dc.contributor.author	Igumbor, Emmanuel
dc.contributor.author	Olaniyan, Okikiola
dc.contributor.author	Mapasha, Refilwe Edwin
dc.contributor.author	Danga, Helga T.
dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Meyer, W.E. (Walter Ernst)
dc.date.accessioned	2018-10-01T10:11:33Z
dc.date.issued	2019-01
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2020-01-01
dc.description.librarian	hj2018	en_ZA
dc.description.sponsorship	The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).	en_ZA
dc.description.uri	http://www.elsevier.com/locate/mssp	en_ZA
dc.identifier.citation	Igumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84.	en_ZA
dc.identifier.issn	1369-8001 (print)
dc.identifier.issn	1873-4081 (online)
dc.identifier.other	10.1016/j.mssp.2018.09.001
dc.identifier.uri	http://hdl.handle.net/2263/66674
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 89, pp. 77-84, 2019. doi : 10.1016/j.mssp.2018.09.001.	en_ZA
dc.subject	Charge state	en_ZA
dc.subject	Complexes	en_ZA
dc.subject	Formation energy	en_ZA
dc.subject	Defect	en_ZA
dc.subject	Semiconducting silicon compounds	en_ZA
dc.subject	Lattice distortions	en_ZA
dc.subject	Hybrid functional	en_ZA
dc.subject	Hybrid density functional theory	en_ZA
dc.subject	High temperature electronic devices	en_ZA
dc.subject	High frequency (HF)	en_ZA
dc.subject	Wide band gap semiconductors	en_ZA
dc.subject	Silicon carbide	en_ZA
dc.subject	Semiconductor doping	en_ZA
dc.subject	High temperature applications	en_ZA
dc.subject	Energy gap	en_ZA
dc.subject	Dielectric properties	en_ZA
dc.subject	Density functional theory (DFT)	en_ZA
dc.subject	Aluminum compounds	en_ZA
dc.title	Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study	en_ZA
dc.type	Postprint Article	en_ZA