dc.contributor.author |
Igumbor, Emmanuel
|
|
dc.contributor.author |
Olaniyan, Okikiola
|
|
dc.contributor.author |
Mapasha, Refilwe Edwin
|
|
dc.contributor.author |
Danga, Helga T.
|
|
dc.contributor.author |
Omotoso, Ezekiel
|
|
dc.contributor.author |
Meyer, W.E. (Walter Ernst)
|
|
dc.date.accessioned |
2018-10-01T10:11:33Z |
|
dc.date.issued |
2019-01 |
|
dc.description.abstract |
Please read abstract in the article. |
en_ZA |
dc.description.department |
Physics |
en_ZA |
dc.description.embargo |
2020-01-01 |
|
dc.description.librarian |
hj2018 |
en_ZA |
dc.description.sponsorship |
The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). |
en_ZA |
dc.description.uri |
http://www.elsevier.com/locate/mssp |
en_ZA |
dc.identifier.citation |
Igumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84. |
en_ZA |
dc.identifier.issn |
1369-8001 (print) |
|
dc.identifier.issn |
1873-4081 (online) |
|
dc.identifier.other |
10.1016/j.mssp.2018.09.001 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/66674 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Elsevier |
en_ZA |
dc.rights |
© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 89, pp. 77-84, 2019. doi : 10.1016/j.mssp.2018.09.001. |
en_ZA |
dc.subject |
Charge state |
en_ZA |
dc.subject |
Complexes |
en_ZA |
dc.subject |
Formation energy |
en_ZA |
dc.subject |
Defect |
en_ZA |
dc.subject |
Semiconducting silicon compounds |
en_ZA |
dc.subject |
Lattice distortions |
en_ZA |
dc.subject |
Hybrid functional |
en_ZA |
dc.subject |
Hybrid density functional theory |
en_ZA |
dc.subject |
High temperature electronic devices |
en_ZA |
dc.subject |
High frequency (HF) |
en_ZA |
dc.subject |
Wide band gap semiconductors |
en_ZA |
dc.subject |
Silicon carbide |
en_ZA |
dc.subject |
Semiconductor doping |
en_ZA |
dc.subject |
High temperature applications |
en_ZA |
dc.subject |
Energy gap |
en_ZA |
dc.subject |
Dielectric properties |
en_ZA |
dc.subject |
Density functional theory (DFT) |
en_ZA |
dc.subject |
Aluminum compounds |
en_ZA |
dc.title |
Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study |
en_ZA |
dc.type |
Postprint Article |
en_ZA |