Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

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dc.contributor.author Igumbor, Emmanuel
dc.contributor.author Olaniyan, Okikiola
dc.contributor.author Mapasha, Refilwe Edwin
dc.contributor.author Danga, Helga T.
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.date.accessioned 2018-10-01T10:11:33Z
dc.date.issued 2019-01
dc.description.abstract Please read abstract in the article. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2020-01-01
dc.description.librarian hj2018 en_ZA
dc.description.sponsorship The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). en_ZA
dc.description.uri http://www.elsevier.com/locate/mssp en_ZA
dc.identifier.citation Igumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84. en_ZA
dc.identifier.issn 1369-8001 (print)
dc.identifier.issn 1873-4081 (online)
dc.identifier.other 10.1016/j.mssp.2018.09.001
dc.identifier.uri http://hdl.handle.net/2263/66674
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 89, pp. 77-84, 2019. doi : 10.1016/j.mssp.2018.09.001. en_ZA
dc.subject Charge state en_ZA
dc.subject Complexes en_ZA
dc.subject Formation energy en_ZA
dc.subject Defect en_ZA
dc.subject Semiconducting silicon compounds en_ZA
dc.subject Lattice distortions en_ZA
dc.subject Hybrid functional en_ZA
dc.subject Hybrid density functional theory en_ZA
dc.subject High temperature electronic devices en_ZA
dc.subject High frequency (HF) en_ZA
dc.subject Wide band gap semiconductors en_ZA
dc.subject Silicon carbide en_ZA
dc.subject Semiconductor doping en_ZA
dc.subject High temperature applications en_ZA
dc.subject Energy gap en_ZA
dc.subject Dielectric properties en_ZA
dc.subject Density functional theory (DFT) en_ZA
dc.subject Aluminum compounds en_ZA
dc.title Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study en_ZA
dc.type Postprint Article en_ZA


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