Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

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Authors

Igumbor, Emmanuel
Olaniyan, Okikiola
Mapasha, Refilwe Edwin
Danga, Helga Tariro
Omotoso, Ezekiel
Meyer, Walter Ernst

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Elsevier

Abstract

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Keywords

Charge state, Complexes, Formation energy, Defect, Semiconducting silicon compounds, Lattice distortions, Hybrid functional, Hybrid density functional theory, High temperature electronic devices, High frequency (HF), Wide band gap semiconductors, Silicon carbide, Semiconductor doping, High temperature applications, Energy gap, Dielectric properties, Density functional theory (DFT), Aluminum compounds

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Citation

Igumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84.