Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study

dc.contributor.authorIgumbor, Emmanuel
dc.contributor.authorOlaniyan, Okikiola
dc.contributor.authorMapasha, Refilwe Edwin
dc.contributor.authorDanga, Helga Tariro
dc.contributor.authorOmotoso, Ezekiel
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2018-10-01T10:11:33Z
dc.date.issued2019-01
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2020-01-01
dc.description.librarianhj2018en_ZA
dc.description.sponsorshipThe National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).en_ZA
dc.description.urihttp://www.elsevier.com/locate/msspen_ZA
dc.identifier.citationIgumbor, E., Olaniyan, O., Mapasha, R.E. et al. 2019, 'Induced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional study', Materials Science in Semiconductor Processing, vol. 89, pp. 77-84.en_ZA
dc.identifier.issn1369-8001 (print)
dc.identifier.issn1873-4081 (online)
dc.identifier.other10.1016/j.mssp.2018.09.001
dc.identifier.urihttp://hdl.handle.net/2263/66674
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 89, pp. 77-84, 2019. doi : 10.1016/j.mssp.2018.09.001.en_ZA
dc.subjectCharge stateen_ZA
dc.subjectComplexesen_ZA
dc.subjectFormation energyen_ZA
dc.subjectDefecten_ZA
dc.subjectSemiconducting silicon compoundsen_ZA
dc.subjectLattice distortionsen_ZA
dc.subjectHybrid functionalen_ZA
dc.subjectHybrid density functional theoryen_ZA
dc.subjectHigh temperature electronic devicesen_ZA
dc.subjectHigh frequency (HF)en_ZA
dc.subjectWide band gap semiconductorsen_ZA
dc.subjectSilicon carbideen_ZA
dc.subjectSemiconductor dopingen_ZA
dc.subjectHigh temperature applicationsen_ZA
dc.subjectEnergy gapen_ZA
dc.subjectDielectric propertiesen_ZA
dc.subjectDensity functional theory (DFT)en_ZA
dc.subjectAluminum compoundsen_ZA
dc.titleInduced defect levels of P and Al vacancy-complexes in 4H-SiC : a hybrid functional studyen_ZA
dc.typePostprint Articleen_ZA

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