E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS
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Date
Authors
Singh, Nishant
Stander, Tinus
Journal Title
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Volume Title
Publisher
Springer
Abstract
We present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.
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Keywords
BiCMOS integrated circuits, Heterojunction bipolar transistors, Millimeter wave integrated circuits, Q measurement, Resonators, Si-Ge alloys, Single-ended, Negative resistance circuits, Combline resonators, Bismuth alloy, BiCMOS technology, Bipolar integrated circuits
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Citation
Singh, N. & Stander, T. E-Band Active Q-Enhanced Pseudo-combline Resonator in 130 nm SiGe BiCMOS. Journal of Infrared, Millimeter, and Terahertz Waves (2018) 39: 949-953. https://doi.org/10.1007/s10762-018-0524-0.