E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS

Singh, Nishant; Stander, Tinus

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dc.contributor.author	Singh, Nishant
dc.contributor.author	Stander, Tinus
dc.date.accessioned	2018-08-02T10:34:31Z
dc.date.issued	2018-10
dc.description.abstract	We present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.	en_ZA
dc.description.department	Electrical, Electronic and Computer Engineering	en_ZA
dc.description.embargo	2019-10-01
dc.description.librarian	hj2018	en_ZA
dc.description.sponsorship	The National Research Foundation under grant UID 93921, as well as the Eskom Tertiary Education Support Programme (TESP) and the UNESCO Participation Programme.	en_ZA
dc.description.uri	https://link.springer.com/journal/10762	en_ZA
dc.identifier.citation	Singh, N. & Stander, T. E-Band Active Q-Enhanced Pseudo-combline Resonator in 130 nm SiGe BiCMOS. Journal of Infrared, Millimeter, and Terahertz Waves (2018) 39: 949-953. https://doi.org/10.1007/s10762-018-0524-0.	en_ZA
dc.identifier.issn	1866-6892 (print)
dc.identifier.issn	1866-6906 (online)
dc.identifier.other	10.1007/s10762-018-0524-0
dc.identifier.uri	http://hdl.handle.net/2263/66062
dc.language.iso	en	en_ZA
dc.publisher	Springer	en_ZA
dc.rights	© Springer Science+Business Media, LLC, part of Springer Nature 2018. The original publication is available at : https://link.springer.com/journal/10762.	en_ZA
dc.subject	BiCMOS integrated circuits	en_ZA
dc.subject	Heterojunction bipolar transistors	en_ZA
dc.subject	Millimeter wave integrated circuits	en_ZA
dc.subject	Q measurement	en_ZA
dc.subject	Resonators	en_ZA
dc.subject	Si-Ge alloys	en_ZA
dc.subject	Single-ended	en_ZA
dc.subject	Negative resistance circuits	en_ZA
dc.subject	Combline resonators	en_ZA
dc.subject	Bismuth alloy	en_ZA
dc.subject	BiCMOS technology	en_ZA
dc.subject	Bipolar integrated circuits	en_ZA
dc.title	E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS	en_ZA
dc.type	Postprint Article	en_ZA