E-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOS

dc.contributor.authorSingh, Nishant
dc.contributor.authorStander, Tinus
dc.contributor.emailtinus.stander@up.ac.zaen_ZA
dc.date.accessioned2018-08-02T10:34:31Z
dc.date.issued2018-10
dc.description.abstractWe present an active Q-enhanced pseudo-combline resonator integrated in 130 nm SiGe BiCMOS. It is shown that the resonator Q0 can be enhanced, controllably, from 15 to 1578 at 78.8 GHz through application of a SiGe HBT-based negative resistance circuit. This is the first time that resonator Q-enhancement is demonstrated experimentally in silicon above 40 GHz, and the first time negative enhancement with single-ended pseudo-combline loading is used.en_ZA
dc.description.departmentElectrical, Electronic and Computer Engineeringen_ZA
dc.description.embargo2019-10-01
dc.description.librarianhj2018en_ZA
dc.description.sponsorshipThe National Research Foundation under grant UID 93921, as well as the Eskom Tertiary Education Support Programme (TESP) and the UNESCO Participation Programme.en_ZA
dc.description.urihttps://link.springer.com/journal/10762en_ZA
dc.identifier.citationSingh, N. & Stander, T. E-Band Active Q-Enhanced Pseudo-combline Resonator in 130 nm SiGe BiCMOS. Journal of Infrared, Millimeter, and Terahertz Waves (2018) 39: 949-953. https://doi.org/10.1007/s10762-018-0524-0.en_ZA
dc.identifier.issn1866-6892 (print)
dc.identifier.issn1866-6906 (online)
dc.identifier.other10.1007/s10762-018-0524-0
dc.identifier.urihttp://hdl.handle.net/2263/66062
dc.language.isoenen_ZA
dc.publisherSpringeren_ZA
dc.rights© Springer Science+Business Media, LLC, part of Springer Nature 2018. The original publication is available at : https://link.springer.com/journal/10762.en_ZA
dc.subjectBiCMOS integrated circuitsen_ZA
dc.subjectHeterojunction bipolar transistorsen_ZA
dc.subjectMillimeter wave integrated circuitsen_ZA
dc.subjectQ measurementen_ZA
dc.subjectResonatorsen_ZA
dc.subjectSi-Ge alloysen_ZA
dc.subjectSingle-endeden_ZA
dc.subjectNegative resistance circuitsen_ZA
dc.subjectCombline resonatorsen_ZA
dc.subjectBismuth alloyen_ZA
dc.subjectBiCMOS technologyen_ZA
dc.subjectBipolar integrated circuitsen_ZA
dc.titleE-band active Q-enhanced pseudo-combline resonator in 130nm SiGe BiCMOSen_ZA
dc.typePostprint Articleen_ZA

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