Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

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Authors

Igumbor, Emmanuel
Olaniyan, Okikiola
Mapasha, Refilwe Edwin
Danga, Helga Tariro
Omotoso, Ezekiel
Meyer, Walter Ernst

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IOP Publishing

Abstract

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Keywords

Ge, Boron, Defects, Silicon, Dielectric properties, Ab Initio, Augmented wave method, Density functional theory (DFT), Complexes, Charge state, Formation energy

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Citation

Igumbor, E., Olaniyan, O., Mapasha, R.E. et al 2018, 'Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC', Journal of Physics: Condensed Matter, vol. 30, no. 18, pp. 1-9.