Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

Igumbor, Emmanuel; Olaniyan, Okikiola; Mapasha, Refilwe Edwin; Danga, Helga T.; Omotoso, Ezekiel; Meyer, W.E. (Walter Ernst)

dc.contributor.author	Igumbor, Emmanuel
dc.contributor.author	Olaniyan, Okikiola
dc.contributor.author	Mapasha, Refilwe Edwin
dc.contributor.author	Danga, Helga T.
dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Meyer, W.E. (Walter Ernst)
dc.date.accessioned	2018-05-08T11:06:22Z
dc.date.issued	2018-04
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2019-04-01
dc.description.librarian	hj2018	en_ZA
dc.description.sponsorship	The National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).	en_ZA
dc.description.uri	http://iopscience.iop.org/journal/0953-8984	en_ZA
dc.identifier.citation	Igumbor, E., Olaniyan, O., Mapasha, R.E. et al 2018, 'Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC', Journal of Physics: Condensed Matter, vol. 30, no. 18, pp. 1-9.	en_ZA
dc.identifier.issn	0953-8984 (print)
dc.identifier.issn	1361-648X (online)
dc.identifier.other	10.1088/1361-648X/aab819
dc.identifier.uri	http://hdl.handle.net/2263/64786
dc.language.iso	en	en_ZA
dc.publisher	IOP Publishing	en_ZA
dc.rights	© 2018 IOP Publishing Ltd.	en_ZA
dc.subject	Ge	en_ZA
dc.subject	Boron	en_ZA
dc.subject	Defects	en_ZA
dc.subject	Silicon	en_ZA
dc.subject	Dielectric properties	en_ZA
dc.subject	Ab Initio	en_ZA
dc.subject	Augmented wave method	en_ZA
dc.subject	Density functional theory (DFT)	en_ZA
dc.subject	Complexes	en_ZA
dc.subject	Charge state	en_ZA
dc.subject	Formation energy	en_ZA
dc.title	Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC	en_ZA
dc.type	Postprint Article	en_ZA