Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

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dc.contributor.author Igumbor, Emmanuel
dc.contributor.author Olaniyan, Okikiola
dc.contributor.author Mapasha, Refilwe Edwin
dc.contributor.author Danga, Helga T.
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.date.accessioned 2018-05-08T11:06:22Z
dc.date.issued 2018-04
dc.description.abstract Please read abstract in the article. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2019-04-01
dc.description.librarian hj2018 en_ZA
dc.description.sponsorship The National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). en_ZA
dc.description.uri http://iopscience.iop.org/journal/0953-8984 en_ZA
dc.identifier.citation Igumbor, E., Olaniyan, O., Mapasha, R.E. et al 2018, 'Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC', Journal of Physics: Condensed Matter, vol. 30, no. 18, pp. 1-9. en_ZA
dc.identifier.issn 0953-8984 (print)
dc.identifier.issn 1361-648X (online)
dc.identifier.other 10.1088/1361-648X/aab819
dc.identifier.uri http://hdl.handle.net/2263/64786
dc.language.iso en en_ZA
dc.publisher IOP Publishing en_ZA
dc.rights © 2018 IOP Publishing Ltd. en_ZA
dc.subject Ge en_ZA
dc.subject Boron en_ZA
dc.subject Defects en_ZA
dc.subject Silicon en_ZA
dc.subject Dielectric properties en_ZA
dc.subject Ab Initio en_ZA
dc.subject Augmented wave method en_ZA
dc.subject Density functional theory (DFT) en_ZA
dc.subject Complexes en_ZA
dc.subject Charge state en_ZA
dc.subject Formation energy en_ZA
dc.title Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC en_ZA
dc.type Postprint Article en_ZA


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