Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC

dc.contributor.authorIgumbor, Emmanuel
dc.contributor.authorOlaniyan, Okikiola
dc.contributor.authorMapasha, Refilwe Edwin
dc.contributor.authorDanga, Helga Tariro
dc.contributor.authorOmotoso, Ezekiel
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2018-05-08T11:06:22Z
dc.date.issued2018-04
dc.description.abstractPlease read abstract in the article.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2019-04-01
dc.description.librarianhj2018en_ZA
dc.description.sponsorshipThe National Research Foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961).en_ZA
dc.description.urihttp://iopscience.iop.org/journal/0953-8984en_ZA
dc.identifier.citationIgumbor, E., Olaniyan, O., Mapasha, R.E. et al 2018, 'Electrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiC', Journal of Physics: Condensed Matter, vol. 30, no. 18, pp. 1-9.en_ZA
dc.identifier.issn0953-8984 (print)
dc.identifier.issn1361-648X (online)
dc.identifier.other10.1088/1361-648X/aab819
dc.identifier.urihttp://hdl.handle.net/2263/64786
dc.language.isoenen_ZA
dc.publisherIOP Publishingen_ZA
dc.rights© 2018 IOP Publishing Ltd.en_ZA
dc.subjectGeen_ZA
dc.subjectBoronen_ZA
dc.subjectDefectsen_ZA
dc.subjectSiliconen_ZA
dc.subjectDielectric propertiesen_ZA
dc.subjectAb Initioen_ZA
dc.subjectAugmented wave methoden_ZA
dc.subjectDensity functional theory (DFT)en_ZA
dc.subjectComplexesen_ZA
dc.subjectCharge stateen_ZA
dc.subjectFormation energyen_ZA
dc.titleElectrically active induced energy levels and metastability of B and N vacancy-complexes in 4H-SiCen_ZA
dc.typePostprint Articleen_ZA

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