Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

Tunhuma, Shandirai Malven; Auret, Francois Danie; Legodi, Matshisa Johannes; Diale, M. (Mmantsae Moche)

dc.contributor.author	Tunhuma, Shandirai Malven
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Legodi, Matshisa Johannes
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.date.accessioned	2018-04-18T12:32:44Z
dc.date.issued	2018-07
dc.description.abstract	We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of diode thermionic emission characteristics due to the sputter deposition. Two electrically active defects E0.29 and E0.69 were introduced. Depth profiling revealed that sputter deposition increases the concentration of the native Z1 defect. A comparison with prominent irradiation and process induced defects showed that the E0.29 was unique and introduced during sputter deposition only. The E0.69 may be silicon vacancy related defect.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2019-07-01
dc.description.librarian	hj2018	en_ZA
dc.description.sponsorship	The South African National Research Foundation and the University of Pretoria.	en_ZA
dc.description.uri	http://www.elsevier.com/locate/mssp	en_ZA
dc.identifier.citation	Tunhuma, S.M., Auret, F.D., Legodi, M.J. et al. 2018, 'Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC', Materials Science in Semiconductor Processing, vol. 81, pp. 122-126.	en_ZA
dc.identifier.issn	1369-8001 (print)
dc.identifier.issn	1873-4081 (online)
dc.identifier.other	10.1016/j.mssp.2018.03.021
dc.identifier.uri	http://hdl.handle.net/2263/64600
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 81, pp. 122-126, 2018. doi : 10.1016/j.mssp.2018.03.021.	en_ZA
dc.subject	Deep-level transient spectroscopy (DLTS)	en_ZA
dc.subject	Sputter deposition	en_ZA
dc.subject	Irradiation	en_ZA
dc.subject	Defects	en_ZA
dc.subject	Silicon vacancies	en_ZA
dc.subject	Induced defects	en_ZA
dc.subject	Emission characteristics	en_ZA
dc.subject	Electrically active defects	en_ZA
dc.subject	Electrical characterization	en_ZA
dc.subject	Current voltage	en_ZA
dc.subject	Capacitance voltage measurements	en_ZA
dc.subject	Tungsten	en_ZA
dc.subject	Thermionic emission	en_ZA
dc.subject	Silicon compounds	en_ZA
dc.subject	Silicon carbide	en_ZA
dc.subject	Depth profiling	en_ZA
dc.subject	Deposition	en_ZA
dc.subject	Capacitance	en_ZA
dc.title	Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC	en_ZA
dc.type	Postprint Article	en_ZA