dc.contributor.author |
Van Laar, Jean H.
|
|
dc.contributor.author |
Bissett, H.
|
|
dc.contributor.author |
Barry, J.C.
|
|
dc.contributor.author |
Van der Walt, I.J.
|
|
dc.contributor.author |
Crouse, Philippus L.
|
|
dc.date.accessioned |
2018-03-05T11:32:21Z |
|
dc.date.issued |
2018-04 |
|
dc.description.abstract |
Silicon carbide (SiC) layers were deposited onto alumina particles in a microwave plasma-assisted spouted bed reactor using methyltrichlorosilane (MTS) and hydrogen mixtures, in argon, as precursor gas feed. The operating parameters studied were enthalpy, gas composition, and pressure. Microwaves were guided from a generator, operating at 2.45 GHz, along a rectangular waveguide intersecting a quartz tube, acting as the reaction zone. A graphite nozzle at the bottom of the tube facilitated the spouting action. Growth rates varied from 50 to 140 μm/h. Overall results indicate that the optimal region for SiC deposition requires relatively high enthalpy (∼5 MJ/kg) and pressure (>−60 kPa) conditions, with hydrogen-to-MTS ratios ∼5:1. The quality (i.e. crystallinity, particle size, Si/C ratios) of the layers improve at these conditions, at the cost of decreased deposition rates. Characterisation was done by XRD, FTIR, XPS, SEM, TEM and EDX, which assisted in developing colour and morphological charts to indicate the changes as a function of changing operating parameters. A microwave plasma spouted bed reactor is demonstrated to be a viable alternative technique for SiC layer deposition onto microspheres. |
en_ZA |
dc.description.department |
Chemical Engineering |
en_ZA |
dc.description.embargo |
2019-04-01 |
|
dc.description.librarian |
hj2018 |
en_ZA |
dc.description.sponsorship |
The South African National Research Foundation and the South African Nuclear Energy Corporation. |
en_ZA |
dc.description.uri |
http://www.elsevier.com/locate/jeurceramsoc |
en_ZA |
dc.identifier.citation |
Van Laar, J.H., Bissett, H., Barry, J.C. et al. 2018, 'Deposition of SiC/Si coatings in a microwave plasma-assisted spouted bed reactor', Journal of the European Ceramic Society, vol. 38, no. 4, pp. 1197-1209. |
en_ZA |
dc.identifier.issn |
0955-2219 (print) |
|
dc.identifier.issn |
1873-619X (online) |
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dc.identifier.other |
10.1016/j.jeurceramsoc.2017.10.030 |
|
dc.identifier.uri |
http://hdl.handle.net/2263/64148 |
|
dc.language.iso |
en |
en_ZA |
dc.publisher |
Elsevier |
en_ZA |
dc.rights |
© 2017 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Cities. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Journal of the European Ceramic Society, vol. 38, no. 4, pp. 1197-1209, 2018. doi : 10.1016/j.jeurceramsoc.2017.10.030. |
en_ZA |
dc.subject |
Silicon carbide (SiC) |
en_ZA |
dc.subject |
Methyltrichlorosilane (MTS) |
en_ZA |
dc.subject |
Microwave plasma |
en_ZA |
dc.subject |
Spouted bed |
en_ZA |
dc.subject |
Particle coating |
en_ZA |
dc.subject |
Microwaves |
en_ZA |
dc.subject |
Spouted bed reactors |
en_ZA |
dc.subject |
Operating parameters |
en_ZA |
dc.subject |
Morphological chart |
en_ZA |
dc.subject |
Silicon compounds |
en_ZA |
dc.subject |
Particle size |
en_ZA |
dc.subject |
Enthalpy |
en_ZA |
dc.subject |
Deposition rates |
en_ZA |
dc.subject |
Coatings |
en_ZA |
dc.subject |
Argon |
en_ZA |
dc.subject |
Alumina |
en_ZA |
dc.title |
Deposition of SiC/Si coatings in a microwave plasma-assisted spouted bed reactor |
en_ZA |
dc.type |
Postprint Article |
en_ZA |