We present a measurement of the energies and capture cross-sections of defect states in methylammonium
lead bromide (MAPbBr3) single crystals. Using Laplace current deep level transient spectroscopy
(I-DLTS), two prominent defects were observed with energies 0.17 eV and 0.20 eV from
the band edges, and further I-DLTS measurements confirmed that these two defects are bulk defects.
These results show qualitative agreement with theoretical predictions, whereby all of the observed
defects behave as traps rather than as generation-recombination centers. These results provide one
explanation for the high efficiencies and open-circuit voltages obtained from devices made with lead
Bible, Amber N.; Fletcher, Sarah J.; Pelletier, Dale A.; Schadt, Christopher W.; Jawdy, Sara S.; Weston, David J.; Engle, Nancy L.; Tschaplinski, Timothy; Masyuko, Rachel; Polisetti, Sneha; Bohn, Paul W.; Coutinho, Teresa A.; Doktycz, Mitchel J.; Morrell-Falvey, Jennifer L.(Frontiers Research Foundation, 2016-04-18)
The complex interactions between plants and their microbiome can have a profound effect on the health and productivity of the plant host. A better understanding of the microbial mechanisms that promote plant health and ...
Tunhuma, S.M.; Auret, F.D. (Francois Danie); Legodi, M.J. (Matshisa Johannes); Diale, M. (Mmantsae Moche)(American Institute of Physics, 2016)
Defects induced by electron irradiation in n-GaAs have been studied using deep level transient spectroscopy
(DLTS) and Laplace DLTS (L-DLTS). The E0.83 (EL2) is the only defect observed prior to
irradiation. Ru/n-GaAs ...
Nyamhere, Cloud(University of Pretoria, 2010-05-26)
Defects in semiconductors are crucial to device operation, as they can either be beneficial or detrimental to the device operation depending on the application. For efficient devices it is important to characterize the ...