We present a measurement of the energies and capture cross-sections of defect states in methylammonium
lead bromide (MAPbBr3) single crystals. Using Laplace current deep level transient spectroscopy
(I-DLTS), two prominent defects were observed with energies 0.17 eV and 0.20 eV from
the band edges, and further I-DLTS measurements confirmed that these two defects are bulk defects.
These results show qualitative agreement with theoretical predictions, whereby all of the observed
defects behave as traps rather than as generation-recombination centers. These results provide one
explanation for the high efficiencies and open-circuit voltages obtained from devices made with lead
Tunhuma, Shandirai Malven(University of Pretoria, 2016)
Gallium arsenide (GaAs) technology leads the implementation of high frequency
devices with superior performance. A vast number of optoelectronic applications
are based on the material owing to its direct and wide bandgap. ...
By means of density functional theory (DFT), using the screened Heyd,
Scuseria, and Ernzerhof (HSE06) hybrid functional we present results of the Tm3+Ge-VGe defect complexes in germanium (Ge). The formation energies of ...