We present a measurement of the energies and capture cross-sections of defect states in methylammonium
lead bromide (MAPbBr3) single crystals. Using Laplace current deep level transient spectroscopy
(I-DLTS), two prominent defects were observed with energies 0.17 eV and 0.20 eV from
the band edges, and further I-DLTS measurements confirmed that these two defects are bulk defects.
These results show qualitative agreement with theoretical predictions, whereby all of the observed
defects behave as traps rather than as generation-recombination centers. These results provide one
explanation for the high efficiencies and open-circuit voltages obtained from devices made with lead
We have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of ...
Tunhuma, S.M. (Shandirai Malven); Diale, M. (Mmantsae Moche); Legodi, M.J. (Matshisa Johannes); Nel, Jackie M. (Jacqueline Margot); Thabethe, Thabsile Theodora; Auret, F.D. (Francois Danie)(American Institute of Physics Inc., 2018-01-18)
Defects introduced by the solid state reactions between tungsten and silicon carbide have been
studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky
barrier diodes were isochronally ...