We present a measurement of the energies and capture cross-sections of defect states in methylammonium
lead bromide (MAPbBr3) single crystals. Using Laplace current deep level transient spectroscopy
(I-DLTS), two prominent defects were observed with energies 0.17 eV and 0.20 eV from
the band edges, and further I-DLTS measurements confirmed that these two defects are bulk defects.
These results show qualitative agreement with theoretical predictions, whereby all of the observed
defects behave as traps rather than as generation-recombination centers. These results provide one
explanation for the high efficiencies and open-circuit voltages obtained from devices made with lead
Meyer, W.E. (Walter Ernst)(University of Pretoria, 2007-06-18)
Since the development of deep level transient spectroscopy (DLTS) in the 1970’s by Lang and others, the technique has become a powerful analytical tool to characterise the electrical properties of defects in semiconductors. ...
The deep level transient spectroscopy (DLTS) technique was used to investigate the effects of
electron beam exposure (EBE) on n-GaN. A defect with activation energy of 0.12 eV and
capture cross section of 8.0 × 10-16 cm2 ...
Fernandes, N.A. (Nelson Alexander); Van den Heever, Jacobus; Hoogendijk, Christiaan Frederik; Botha, Sarel; Booysen, Gerrie; Els, Johan(Wiley, 2016-10)
Malignant peripheral nerve sheath tumours are extremely rare tumours arising in peripheral
nerves. Only 17 cases involving the trigeminal nerve have ever been reported. These tumours
have a very poor prognosis and very ...