Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC

Omotoso, Ezekiel; Paradzah, Alexander Tapera; Legodi, Matshisa Johannes; Diale, M. (Mmantsae Moche); Meyer, Walter Ernst; Auret, Francois Danie

dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Paradzah, Alexander Tapera
dc.contributor.author	Legodi, Matshisa Johannes
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Auret, Francois Danie
dc.date.accessioned	2017-11-10T09:29:59Z
dc.date.issued	2017-10
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.department	Physics	en_ZA
dc.description.embargo	2018-10-15
dc.description.librarian	hj2017	en_ZA
dc.description.sponsorship	The University of Pretoria; Postdoctoral Fellowship Program of the University of Pretoria and the National Research Foundation (NRF) of South Africa.	en_ZA
dc.description.uri	http://www.elsevier.com/locate/nimb	en_ZA
dc.identifier.citation	Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E. & Auret, F.D. 2017, 'Electrical characterization of electron irradiated and annealed lowly - doped 4H-SiC', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45.	en_ZA
dc.identifier.issn	0168-583X (print)
dc.identifier.issn	1872-9584 (online)
dc.identifier.other	10.1016/j.nimb.2017.05.042
dc.identifier.uri	http://hdl.handle.net/2263/63094
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2017 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 409, pp. 41-45, 2017. doi : 10.1016/j.nimb.2017.05.042.	en_ZA
dc.subject	High energy electron (HEE)	en_ZA
dc.subject	Irradiation	en_ZA
dc.subject	4H-SiC	en_ZA
dc.subject	Schottky contacts	en_ZA
dc.subject	Deep level transient spectroscopy (DLTS)	en_ZA
dc.subject	Spectroscopy	en_ZA
dc.subject	Detectors	en_ZA
dc.subject	Defects	en_ZA
dc.subject	Schottky diodes	en_ZA
dc.subject	Deep levels	en_ZA
dc.subject	Band gap states	en_ZA
dc.subject	4H–silicon carbide	en_ZA
dc.subject	Alpha-particle irradiation	en_ZA
dc.title	Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC	en_ZA
dc.type	Postprint Article	en_ZA