Migration behaviour of Europium implanted into single crystalline 6H-SiC

Abstract

Migration behaviour of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford backscattering spectroscopy (RBS), RBS in a channelling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600 °C to a fluence of 1 × 1016 cm−2. The implanted samples were sequentially annealed at temperatures ranging from 1000 to 1400 °C, in steps of 100 °C for 5 h. RBS-C showed that implantation of Eu into 6H-SiC at 600 °C retained crystallinity with some radiation damage. Annealing of radiation damage retained after implantation already took place after annealing at 1000 °C. This annealing of radiation damage progressed with increasing annealing temperature up to 1400 °C. A shift of Eu towards the surface took place after annealing at 1000 °C. This shift became more pronounced and was accompanied by loss of Eu from the surface at annealing temperatures >1000 °C. This shift was accompanied by broadening of Eu peak/Fickian diffusion after annealing at temperatures >1100 °C. The migration of Eu occurring concurrently with the annealing of radiation damage was explained by trapping and de-trapping of Eu by radiation damage.