Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

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dc.contributor.author Tunhuma, S.M.
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Nel, Jackie M. (Jacqueline Margot)
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Danga, Helga T.
dc.contributor.author Igumbor, Emmanuel
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2017-06-28T13:32:18Z
dc.date.issued 2017-05 en
dc.description.abstract We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type gallium arsenide by electron beam exposure prior to Schottky metallization. The GaAs crystals were exposed to incident electrons at sub-threshold energies which are deemed low and insufficient to form defects through ion solid interactions. DLTS revealed a set of electron traps different from those commonly observed in n-GaAs after particle irradiation. These different signatures from the same radiation type suggest that different mechanisms are responsible for defect formation in the two electron irradiation processes. An analysis of the conditions under which the defects were formed was done to distil a number of possible defect formation mechanisms using the experimental evidence obtained. en_ZA
dc.description.department Physics en
dc.description.embargo 2018-05-24
dc.description.sponsorship The South African National Research Foundation (NRF) and the University of Pretoria. en
dc.description.uri http://www.elsevier.com/locate/nimb en
dc.identifier.citation Tunhuma, S.M., Auret, F.D., Nel, J.M., Omotoso, E., Danga, H.T., Igumbor, E. & Diale, M. 2017, 'Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, NYP. en
dc.identifier.issn 1872-9584 (online) en
dc.identifier.issn 0168-583X (print) en
dc.identifier.other 10.1016/j.nimb.2017.05.041 en
dc.identifier.uri http://hdl.handle.net/2263/61180
dc.language.iso English en
dc.publisher Elsevier en
dc.rights © 2017 Published by Elsevier B.V. All rights reserved. Notice : this is the author's version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. x, no. y, pp. z-zz, 2017. doi : 10.1016/j.nimb.2017.05.041. en
dc.subject Discrete breathers en
dc.subject Electron beam exposure en
dc.subject Gallium arsenide en
dc.subject Laplace DLTS en
dc.subject Threshold energy en
dc.subject Deep level transient spectroscopy (DLTS) en
dc.title Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs en_ZA
dc.type Postprint Article en


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